NDH854P datasheet(4/8 Pages) FAIRCHILD

Part #	NDH854P

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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NDH854P Rev.D

-3

-2

-1

0

-20

-15

-10

-5

0

V

, DRAIN-SOURCE VOLTAGE (V)

DS

-4.5

-2.5

-4.0

-5.0

-3.5

-3.0

V

= -10V

GS

-6.0

-50

-25

0

25

50

75

100

125

150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

J

V

= -10V

GS

I

= -5.1A

D

-50

-25

0

25

50

75

100

125

150

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

J

I

= -250µA

D

V

= V

GS

DS

-20

-15

-10

-5

0

0.5

1

1.5

2

2.5

I

, DRAIN CURRENT (A)

V

= -3.5 V

GS

D

-10

-4.5

-4.0

-7.0

-6.0

-5.0

-5.5

-20

-15

-10

-5

0

0.5

1

1.5

2

I

, DRAIN CURRENT (A)

D

V

= -10V

GS

T = 125°C

J

25°C

-55°C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Transfer Characteristics.

Figure 6. Gate Threshold Variation with

Temperature.

-5

-4.5

-4

-3.5

-3

-2.5

-2

-1.5

-1

-25

-20

-15

-10

-5

0

V

, GATE TO SOURCE VOLTAGE (V)

V

= -5V

DS

GS

T

=-55°C

J

125°C

25°C

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