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2SC4957-T1 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC4957-T1
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC4957-T1 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10520EJ01V0DS
3
2SC4957
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200
100
0
50
100
150
180 mW
Free Air
0.1
0.5
0.2
0.3
0.4
0.5
12
5
10
20
f = 1 MHZ
50
40
30
20
10
0
0.5
1.0
VCE = 3 V
60
01
500 A
400 A
300 A
200 A
IB = 100 A
50
40
30
20
10
23456
µ
µ
µ
µ
µ
0.1
200
100
0
0.2
0.5
1
2
5
10
20
50 100
VCE = 3 V
VCE = 5 V
14
0.5
12
10
8
6
4
2
12
5
10
20
50
VCE = 1 V
f = 2 GHZ
VCE = 3 V
VCE = 5 V
Remark The graphs indicate nominal characteristics.


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