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NDH8321C Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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NDH8321C Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 12 page NDH8321C Rev.C1 Typical Electrical Characteristics: N-Channel Figure 1. N-Channel On-Region Characteristics. Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. Figure 3. N-Channel On-Resistance Variation with Temperature. Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. Figure 5. N-Channel Transfer Characteristics. Figure 6. N-Channel Gate Threshold Variation with Temperature. 0 0 .5 1 1 .5 2 2 .5 3 0 4 8 12 16 20 V , DRAIN-SOURCE VOLTAGE (V) DS 1 .5 2 .0 2.7 2 .5 3 .0 V = 4.5V GS 0 4 8 12 16 20 0 .8 1 1 .2 1 .4 1 .6 1 .8 2 I , DRAIN CURRENT (A) V = 2 .0V GS D 4 .5 3 .5 2 .5 3.0 2.7 4 .0 -50 -25 0 25 50 75 100 125 150 0 .6 0 .8 1 1 .2 1 .4 1 .6 1 .8 T , JUNCTION TEM PERATURE (°C) J V = 4.5V GS I = 3.8A D 0 4 8 12 16 20 0 0 .5 1 1 .5 2 I , DRAIN CURRENT (A) V = 4.5 V GS T = 125°C J 25°C -55° C D 0 0 .5 1 1 .5 2 2 .5 0 3 6 9 12 15 V , GATE TO SOU RCE VOLTAGE (V) 25° C 125° C V = 5V DS GS T = -55°C J -50 -25 0 25 50 75 100 125 150 0 .5 0 .6 0 .7 0 .8 0 .9 1 1 .1 1 .2 1 .3 T , JUNCTION TEM PERATURE (°C) J I = 250µA D V = V GS DS |
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