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TLP285 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP285 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 16 page TLP285 2009-05-27 3 Absolute Maximum Ratings (Ta = 25℃) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF(RMS) 50 mA Forward Current Derating ∆IF /°C −1.0 (Ta≥75°C) mA /°C Pulse Forward Current (Note2) IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 7 V Collector Current IC 50 mA Collector Power Dissipation PC 150 mW Collector Power Dissipation Derating(Ta≥25°C) ∆PC /°C −1.5 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55 to 110 °C Storage Temperature Range Tstg −55 to 125 °C Lead Soldering Temperature Tsol 260 (10s) °C Total Package Power Dissipation PT 200 mW Total Package Power Dissipation Derating (Ta≥25°C) ∆PT /°C −2.0 mW /°C Isolation Voltage (Note3) BVS 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note2 : Pulse width ≤ 100μs, frequency 100Hz Note3 : AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. Individual Electrical Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, Ambient Light Below (100 ℓx) (Note 4) — 0.01 (2) 0.1 (10) μA Collector Dark Current (Note5) ICEO VCE = 48 V, Ta = 85°C Ambient Light Below (100 ℓx) (Note 4) — 2 (4) 50 (50) μA Capacitance (Collector to Emitter) CCE V = 0, f = 1 MHz — 10 — pF Note.4 :Irradiation to marking side using standard light bulb. Note 5 :Because of the construction, leak current might be increased by ambient light. Please use photocoupler with less ambient light. |
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