Parameter

Conditions

Min

Typ

Max

Unit

OUTPUT CHARACTERISTICS

Output Voltage Swing

Ω±5 V

3.3

3.8

±V

Ω±5 V

3.2

3.6

±V

Ω±15 V

13.3

13.7

±V

Ω±15 V

12.8

13.4

±V

1.5

Ω

0, +5 V

3.5

±V

Output Current

±15 V

50

mA

±5 V

40

mA

0, +5 V

30

mA

Short Circuit Current

±15 V

90

mA

Output Resistance

Open-Loop

8

Ω

MATCHING CHARACTERISTICS

Dynamic

Crosstalk

f = 5 MHz

±15 V

–80

dB

Gain Flatness Match

G = +1, f = 40 MHz

±15 V

0.2

dB

Skew Rate Match

G = –1

±15 V

10

V/

µs

DC

Input Offset Voltage Match

±5 V, ±15 V

0.5

2

mV

Input Bias Current Match

±5 V, ±15 V

0.06

0.8

µA

Open-Loop Gain Match

±10 V, R

Ω, T

±15 V

0.01

0.15

mV/V

Common-Mode Rejection Ratio Match

±12 V, T

±15 V

80

100

dB

Power Supply Rejection Ratio Match

±5 V to ±15 V, T

80

100

dB

POWER SUPPLY

Operating Range

Dual Supply

±2.5

±18

V

Single Supply

+5

+36

V

Quiescent Current

±5 V

14.0

15

mA

±5 V

14.0

15

mA

±5 V

15

mA

Power Supply Rejection Ratio

±5 V to ±15 V, T

80

90

dB

*Full power bandwidth = slew rate/2

π V

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±18 V

Internal Power Dissipation

2

Plastic DIP (N) . . . . . . . . . . . . . . . . . . See Derating Curves

Small Outline (R) . . . . . . . . . . . . . . . . . See Derating Curves

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .

±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . .

±6 V

Output Short Circuit Duration . . . . . . . . See Derating Curves

Storage Temperature Range (N, R) . . . . . . . . –65

°C to +125°C

Operating Temperature Range . . . . . . . . . . . . –40

°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300

°C

NOTES

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

8-Lead Plastic DIP Package:

θ

°C/W

8-Lead SOIC Package:

θ

°C/W

2.0

0

–50

90

1.5

0.5

–30

1.0

50

70

30

10

–10

80

–40

40

60

20

0

–20

AMBIENT TEMPERATURE – C

8-LEAD MINI-DIP PACKAGE

8-LEAD SOIC PACKAGE

Figure 3. Maximum Power Dissipation vs.

Temperature for Different Package Types

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although

the AD828 features proprietary ESD protection circuitry, permanent damage may occur on devices

subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are

recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

AD828

–3–

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

AD828AN

–40

°C to +85°C 8-Lead Plastic DIP N-8

AD828AR

–40

°C to +85°C 8-Lead Plastic SOIC SO-8

AD828AR-REEL7 –40

°C to +85°C 7" Tape and Reel

SO-8

AD828AR-REEL –40

°C to +85°C 13" Tape and Reel SO-8