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2SC5200 Datasheet(PDF) 3 Page - STMicroelectronics |
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2SC5200 Datasheet(HTML) 3 Page - STMicroelectronics |
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2SC5200 Electrical characteristics Doc ID 16310 Rev 1 3/8 2 Electrical characteristics Tcase = 25 °C unless otherwise specified Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 230 V 5 µA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 5 µA V(BR)CEO (1) 1. Pulsed: pulse duration = 300 µs, duty cycle ≤ 1.5% Collector-emitter breakdown voltage (IB = 0) IC = 50 mA 230 V V(BR)CBO Collector-base breakdown voltage (IE = 0) IC = 100 µA 230 V V(BR)EBO (1) Emitter-base breakdown voltage (IC = 0) IE = 1 mA 5 V VCE(sat) (1) Collector-emitter saturation voltage IC = 8 A IB = 800 mA 3 V VBE Base-emitter voltage IC = 7 A VCE = 5 V 1.5 V hFE DC current gain IC = 1 A VCE = 5 V IC = 7 A VCE = 5 V 55 35 80 120 ton ts tf Resistive load Turn-on time Storage time Fall time VCC = 60 V IC = 5A IB1= -IB2 = 0.5 A 0.24 4.7 0.6 µs µs µs fT Transition frequency IC = 1 A VCE = 5 V 30 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 150 pF Obsolete Product(s) - Obsolete Product(s) |
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