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2SC5200 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. 2SC5200
Description  High power NPN epitaxial planar bipolar transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2SC5200 Datasheet(HTML) 3 Page - STMicroelectronics

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2SC5200
Electrical characteristics
Doc ID 16310 Rev 1
3/8
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 230 V
5
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
5
µA
V(BR)CEO
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle
≤ 1.5%
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
230
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
230
V
V(BR)EBO
(1) Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
5
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
3
V
VBE
Base-emitter voltage
IC = 7 A
VCE = 5 V
1.5
V
hFE
DC current gain
IC = 1 A
VCE = 5 V
IC = 7 A
VCE = 5 V
55
35
80
120
ton
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
VCC = 60 V IC = 5A
IB1= -IB2 = 0.5 A
0.24
4.7
0.6
µs
µs
µs
fT
Transition frequency
IC = 1 A
VCE = 5 V
30
MHz
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V f = 1 MHz
150
pF
Obsolete
Product(s)
- Obsolete
Product(s)


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