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2SC5200 Datasheet(PDF) 1 Page - STMicroelectronics |
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2SC5200 Datasheet(HTML) 1 Page - STMicroelectronics |
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Preliminary data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2009 Doc ID 16310 Rev 1 1/8 8 2SC5200 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplifier Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram TO-264 1 2 3 Table 1. Device summary Order code Marking Package Packaging 2SC5200 2SC5200 TO-264 Tube www.st.com Obsolete Product(s) - Obsolete Product(s) |
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