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UPA862TD Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. UPA862TD
Description  NPN Silicon RF Twin Transistor with 2 Different Elements
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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UPA862TD Datasheet(HTML) 3 Page - Renesas Technology Corp

 
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μPA862TD
R09DS0032EJ0200 Rev.2.00
Page 3 of 18
Dec 19, 2011
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0
100
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 10 mA
75
110
150
Gain Bandwidth Product
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
10.0
12.0
GHz
Insertion Power Gain
⏐S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
1.5
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0, f = 1 MHz
0.4
0.7
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0
600
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 5 mA
100
120
145
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.5
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
5.0
6.5
GHz
Insertion Power Gain (1)
⏐S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
3.0
4.0
dB
Insertion Power Gain (2)
⏐S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
4.5
5.5
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
1.9
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0, f = 1 MHz
0.6
0.8
pF
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB/YFB
Marking
vY
hFE Value of Q1
75 to 150
hFE Value of Q2
100 to 145


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