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UPA862TD Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. UPA862TD
Description  NPN Silicon RF Twin Transistor with 2 Different Elements
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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UPA862TD Datasheet(HTML) 2 Page - Renesas Technology Corp

 
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μPA862TD
R09DS0032EJ0200 Rev.2.00
Page 2 of 18
Dec 19, 2011
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
VCBO
9
9
V
Collector to Emitter Voltage
VCEO
6
5.5
V
Emitter to Base Voltage
VEBO
2
1.5
V
Collector Current
IC
30
100
mA
180
190
Total Power Dissipation
Ptot
Note
210 in 2 elements
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB


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