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UPA862TD Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. UPA862TD
Description  NPN Silicon RF Twin Transistor with 2 Different Elements
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA862TD Datasheet(HTML) 1 Page - Renesas Technology Corp

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R09DS0032EJ0200 Rev.2.00
Page 1 of 18
Dec 19, 2011
The mark <R> shows major revised points.
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Preliminary Data Sheet
μPA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP.,
⏐S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP.,
⏐S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5010
2SC5801
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
Supplying Form
μPA862TD
μPA862TD-A
50 pcs (Non reel)
6-pin lead -less minimold
• 8 mm wide embossed taping
μPA862TD-T3
μPA862TD-T3-A
10 kpcs/reel
(1208) (Pb-Free)
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
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