UPA862TD datasheet(9/20 Pages) RENESAS

Part #	UPA862TD

Description	NPN Silicon RF Twin Transistor with 2 Different Elements

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Manufacturer	RENESAS [Renesas Technology Corp]

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9 / 20 page

μPA862TD

R09DS0032EJ0200 Rev.2.00

Page 9 of 18

Dec 19, 2011

Q1

Q2

VCE = 1 V

IC = 10 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

VCE = 2 V

IC = 10 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

VCE = 3 V

IC = 10 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

VCE = 1 V

IC = 5 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

VCE = 2 V

IC = 5 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

VCE = 1 V

IC = 15 mA

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

30

25

20

15

10

5

0

0.1

1

10

MAG

MSG

|S21e|

2

Remark The graphs indicate nominal characteristics.

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