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UPA862TD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. UPA862TD
Description  NPN Silicon RF Twin Transistor with 2 Different Elements
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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UPA862TD Datasheet(HTML) 4 Page - Renesas Technology Corp

 
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μPA862TD
R09DS0032EJ0200 Rev.2.00
Page 4 of 18
Dec 19, 2011
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°C)
300
250
210
190
180
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
2 Elements in total
Q2
Q1
Q1
Q2
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
02
4
6
8
10
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
f = 1 MHz
Remark The graphs indicate nominal characteristics.


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