R09DS0037EJ0100 Rev.1.00

Page 1 of 9

Apr 18, 2012

Data Sheet

NESG7030M04

NPN Silicon Germanium Carbon RF Transistor

FEATURES

• The device is an ideal choice for low noise, high gain amplification.

• P

• Maximum stable power gain: MSG =16.5 dB TYP. @ V

• SiGe: C HBT technology

• This product is improvement of ESD.

• Flat-lead 4-pin thin-type super minimold (M04 PKG)

OUTLINE

1. Emitter

2. Collector

3. Emitter

4. Base

Note : Marking is "T1R."

RENESAS Package code : M04

(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))

1

2

4

3

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG7030M04

NESG7030M04-A

50 pcs

(Non reel)

NESG7030M04-T2

NESG7030M04-T2-A

3 kpcs/reel

NESG7030M04-T2B

NESG7030M04-T2B-A

Flat-lead 4-pin thin-

type super minimold

(M04 PKG)

(Pb-Free)

15kpcs/reel

• 8 mm wide embossed taping

• Pin 1(Emitter), Pin 2

(Collector) face the

perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0037EJ0100

Rev.1.00

Apr 18, 2012