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NESG3033M14-T3-A Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # NESG3033M14-T3-A
Description  NPN SiGe RF Transistor for Low Noise, High-Gain
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NESG3033M14-T3-A Datasheet(HTML) 9 Page - Renesas Technology Corp

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Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
VCE = 3 V
f = 3 GHz
|S21e|
2
30
25
20
15
10
5
0
1
10
100
MAG
MSG
VCE = 3 V
f = 5 GHz
|S21e|
2
30
25
20
15
10
5
0
1
10
100
MAG
VCE = 3 V
f = 2 GHz
|S21e|
2
30
25
20
15
10
5
0
1
10
100
MAG
MSG
Remark The graphs indicate nominal characteristics.
NESG3033M14
R09DS0049EJ0300 Rev.3.00
Page 9 of 14
Sep 14, 2012


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