R09DS0036EJ0300 Rev. 3.00

Page 1 of 13

Jun 20, 2012

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Data Sheet

NESG2101M05

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)

Flat-Lead 4-Pin Thin-Type Super Minimold (M05)

FEATURES

• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-

gain amplification

⎯ P

⎯ NF = 0.6 dB TYP., G

• Maximum stable power gain: MSG = 17.0 dB TYP. @ V

• High breakdown voltage technology for SiGe Tr. adopted: V

• Flat-lead 4-pin thin-type super minimold (M05) package

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG2101M05

NESG2101M05-A

50 pcs

(Non reel)

NESG2101M05-T1 NESG2101M05-T1-A

Flat-lead 4-pin thin-type

supper minimold

(M05, 2012 PKG)

(Pb-Free)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector), Pin 4

(Emitter) face the perforation

side of the tape

Remark

To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

13.0

V

Collector to Emitter Voltage

5.0

V

Emitter to Base Voltage

1.5

V

Collector Current

100

mA

Total Power Dissipation

Note

500

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note:

Mounted on 38 cm

2

× 0.4 mm (t) polyimide PCB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

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R09DS0036EJ0300

Rev. 3.00

Jun 20, 2012