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NESG2101M05-T1 Datasheet(PDF) 9 Page - Renesas Technology Corp |
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NESG2101M05-T1 Datasheet(HTML) 9 Page - Renesas Technology Corp |
9 / 15 page NESG2101M05 R09DS0036EJ0300 Rev. 3.00 Page 9 of 13 Jun 20, 2012 VCE = 3.6 V, f = 1 GHz Icq = 10 mA 30 25 20 15 10 5 0 120 20 40 60 100 80 0 –20 –5 –10 –15 0 5 10 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER GP Pout IC C η VCE = 3.6 V, f = 2 GHz Icq = 10 mA 25 20 15 10 5 0 –5 120 20 40 60 100 80 0 –15 0 –5 –10 5 10 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER GP Pout IC C η VCE = 3.6 V, f = 3 GHz Icq = 10 mA 25 20 15 10 5 0 –5 120 20 40 60 100 80 0 –15 0 –5 –10 5 10 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER GP Pout IC C η VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA 25 20 15 10 5 0 –5 120 20 40 60 100 80 0 –10 5 0 –5 10 15 20 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER GP Pout IC C η Remark The graph indicates nominal characteristics. |
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