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H11AA1SR2VM Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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H11AA1SR2VM Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 10 page  ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 3 Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics *Typical values at TA = 25°C Transfer Characteristics Isolation Characteristics *Typical values at TA = 25°C Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = ±10mA All 1.17 1.5 V CJ Capacitance VF = 0 V, f = 1.0MHz All 80 pF DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0mA, IF = 0 All 30 100 V BVCBO Collector to Base IC = 100µA, IF = 0 All 70 120 V BVEBO Emitter to Base IE = 100µA, IF = 0 All 5 10 V BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 10 V ICEO Leakage Current Collector to Emitter VCE = 10 V, IF = 0 H11AA1M H11AA3M H11AA4M 150 nA H11AA2M 1 200 CCE Capacitance Collector to Emitter VCE = 0, f = 1MHz All 10 pF CCB Collector to Base VCB = 0, f = 1MHz All 80 pF CEB Emitter to Base VEB = 0, f = 1MHz All 15 pF Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units CTRCE Current Transfer Ratio, Collector to Emitter IF = ±10mA, VCE = 10V H11AA4M 100 % H11AA3M 50 H11AA1M 20 H11AA2M 10 Current Transfer Ratio, Symmetry IF = ±10mA, VCE = 10V (Figure 11) All .33 3.0 VCE(SAT) Saturation Voltage, Collector to Emitter IF = ±10mA, ICE = 0.5mA All .40 V Symbol Characteristic Test Conditions Min. Typ.* Max. Units CI-O Package Capacitance Input/Output VI-O = 0, f = 1MHz 0.7 pF VISO Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk) RISO Isolation Resistance VI-O = 500 VDC 1011 Ω |
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