LM27x7

HG

BOOT

LG

PGND

FB

SD

PWGD

FREQ

SS

SGND

EAO

PGND

+5V

2200PF

6.3V, 2.8A

1.5 PH

6.1 A, 9.6 m:

D1

Q1

Q2

10PF

6.3V

10k

2.2k

10k

392k

2.2p

180p

12n

63.4k

2.2PF

10:

0.1P

L1

+

Si4884DY

Si4884DY

LM2727, LM2737

www.ti.com

SNVS205D – AUGUST 2002 – REVISED MARCH 2013

LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output

Voltages

Check for Samples: LM2727, LM2737

1

FEATURES

DESCRIPTION

The

LM2727

and

LM2737

are

high-speed,

2

•

Input Power from 2.2V to 16V

synchronous, switching regulator controllers. They

•

Output Voltage Adjustable Down to 0.6V

are intended to control currents of 0.7A to 20A with

•

Power Good flag, Adjustable Soft-Start and

up to 95% conversion efficiencies. The LM2727

Output Enable for Easy Power Sequencing

employs output over-voltage and under-voltage latch-

off. For applications where latch-off is not desired, the

•

Output Over-Voltage and Under-Voltage Latch-

LM2737

can

be

used.

Power

up

and

down

Off (LM2727)

sequencing is achieved with the power-good flag,

•

Output Over-Voltage and Under-Voltage Flag

adjustable soft-start and output enable features. The

(LM2737)

LM2737 and LM2737 operate from a low-current 5V

bias and can convert from a 2.2V to 16V power rail.

•

Reference Accuracy: 1.5% (0°C - 125°C)

Both parts utilize a fixed-frequency, voltage-mode,

•

Current Limit Without Sense Resistor

PWM

control

architecture

and

the

switching

•

Soft Start

frequency is adjustable from 50kHz to 2MHz by

•

Switching Frequency from 50 kHz to 2 MHz

adjusting the value of an external resistor. Current

limit is achieved by monitoring the voltage drop

•

TSSOP-14 Package

across the on-resistance of the low-side MOSFET,

which enhances low duty-cycle operation. The wide

APPLICATIONS

range of operating frequencies gives the power

•

Cable Modems

supply designer the flexibility to fine-tune component

size, cost, noise and efficiency. The adaptive, non-

•

Set-Top Boxes/ Home Gateways

overlapping MOSFET gate-drivers and high-side

•

DDR Core Power

bootstrap

structure

helps

to

further

maximize

•

High-Efficiency Distributed Power

efficiency. The high-side power FET drain voltage can

be from 2.2V to 16V and the output voltage is

•

Local Regulation of Core Power

adjustable down to 0.6V.

Typical Application

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2002–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.