NTLUS3A40PZTAG datasheet(2/6 Pages) ONSEMI

Part #	NTLUS3A40PZTAG

Description	Power MOSFET 20 V, 9.4Cool Single P Channel ESD 2.0x2.0x0.55 mm UDFNPackage

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NTLUS3A40PZ

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Units

Junction-to-Ambient – Steady State (Note 3)

RθJA

72

°C/W

Junction-to-Ambient – t ≤ 5 s (Note 3)

RθJA

33

Junction-to-Ambient – Steady State min Pad (Note 4)

RθJA

189

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, ref to 25°C

−5.0

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −20 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−10

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.4

−1.0

V

Negative Threshold Temp. Coefficient

VGS(TH)/TJ

3.0

mV/°C

Drain-to-Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −6.4 A

23

29

mW

VGS = −2.5 V, ID = −4.8 A

31

39

VGS = −1.8 V, ID = −2.5 A

43

60

VGS = −1.5 V, ID = −1.5 A

60

120

Forward Transconductance

gFS

VDS = −15 V, ID = −4.0 A

18

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = −15 V

2600

pF

Output Capacitance

COSS

200

Reverse Transfer Capacitance

CRSS

190

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −15 V;

ID = −4.0 A

29

nC

Threshold Gate Charge

QG(TH)

1.4

Gate-to-Source Charge

QGS

3.7

Gate-to-Drain Charge

QGD

8.1

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)

Turn-On Delay Time

td(ON)

VGS = −4.5 V, VDD = −15 V,

ID = −4.0 A, RG = 1 W

9.0

ns

Rise Time

tr

18

Turn-Off Delay Time

td(OFF)

126

Fall Time

tf

71

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −1.0 A

TJ = 25°C

0.65

1.0

V

TJ = 125°C

0.55

Reverse Recovery Time

tRR

VGS = 0 V, dis/dt = 100 A/ms,

IS = −1.0 A

25

ns

Charge Time

ta

10

Discharge Time

tb

15

Reverse Recovery Charge

QRR

13.6

nC

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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