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NTLUS3A40PZTAG Datasheet(PDF) 2 Page - ON Semiconductor |
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NTLUS3A40PZTAG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTLUS3A40PZ http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 3) RθJA 72 °C/W Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 33 Junction-to-Ambient – Steady State min Pad (Note 4) RθJA 189 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C −5.0 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −20 V TJ = 25°C −1.0 mA TJ = 85°C −10 Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V ±10 mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.4 −1.0 V Negative Threshold Temp. Coefficient VGS(TH)/TJ 3.0 mV/°C Drain-to-Source On Resistance RDS(on) VGS = −4.5 V, ID = −6.4 A 23 29 mW VGS = −2.5 V, ID = −4.8 A 31 39 VGS = −1.8 V, ID = −2.5 A 43 60 VGS = −1.5 V, ID = −1.5 A 60 120 Forward Transconductance gFS VDS = −15 V, ID = −4.0 A 18 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −15 V 2600 pF Output Capacitance COSS 200 Reverse Transfer Capacitance CRSS 190 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −15 V; ID = −4.0 A 29 nC Threshold Gate Charge QG(TH) 1.4 Gate-to-Source Charge QGS 3.7 Gate-to-Drain Charge QGD 8.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) VGS = −4.5 V, VDD = −15 V, ID = −4.0 A, RG = 1 W 9.0 ns Rise Time tr 18 Turn-Off Delay Time td(OFF) 126 Fall Time tf 71 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.0 A TJ = 25°C 0.65 1.0 V TJ = 125°C 0.55 Reverse Recovery Time tRR VGS = 0 V, dis/dt = 100 A/ms, IS = −1.0 A 25 ns Charge Time ta 10 Discharge Time tb 15 Reverse Recovery Charge QRR 13.6 nC 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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