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MPSA05 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. MPSA05
Description  NPN General Purpose Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

MPSA05 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6”
× 0.06"
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector current
- Continuous
500
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 1mA, IB = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 100µA, IC = 0
4
V
ICEO
Collector Cutoff Current
VCE = 60V, IB = 0
0.1
µA
ICBO
Emitter Cutoff Current
VCB = 60V, IE = 0
0.1
µA
On Characteristics
hFE
DC Current Gain
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
100
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 10mA
0.25
V
VBE(on)
Base-Emitter On Voltage
IC = 100mA, VCE = 1.0V
1.2
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 2V,
f = 100MHz
100
MHz
Symbol
Parameter
Max.
Units
MPSA05
*MMBTA05
PD
Total Device Dissipation
Derate above 25
°C
625
5
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
MPSA05/MMBTA05
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
applications at collector currents to 300mA.
• Sourced from process 10.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 1H
TO-92
1
1. Emitter 2. Base 3. Collector


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