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MOCD211-M Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MOCD211-M Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  5/28/03 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS Page 1 of 8 © 2003 Fairchild Semiconductor Corporation MOCD211-M EMITTER 1 COLLECTOR 1 ANODE 1 CATHODE 1 1 2 3 4 5 6 7 8 EMITTER 2 COLLECTOR 2 ANODE 2 CATHODE 2 DESCRIPTION The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. FEATURES •U.L. Recognized (File #E90700, Volume 2) • VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M) • Minimum BVCEO of 30 Volts Guaranteed • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 VAC(rms) Guaranteed • Compact Dual Channel Optocoupler APPLICATIONS • Interfacing and coupling systems of different potentials and impedances • General purpose switching circuits • Monitor and detection circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating Symbol Value Unit EMITTER Forward Current - Continuous IF 60 mA Forward Current - Peak (PW = 100 µs, 120 pps) IF (pk) 1.0 A Reverse Voltage VR 6.0 V LED Power Dissipation @ TA = 25°C PD 90 mW Derate above 25°C 0.8 mW/°C DETECTOR Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 7.0 V Collector Current-Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C PD 150 mW Derate above 25°C 1.76 mW/°C TOTAL DEVICE Input-Output Isolation Voltage(1,2,3) (f = 60 Hz, 1 min. Duration) VISO 2500 Vac(rms) Total Device Power Dissipation @ TA = 25°C PD 250 mW Derate above 25°C 2.94 mW/°C Ambient Operating Temperature Range TA -40 to +100 °C Storage Temperature Range Tstg -40 to +125 °C |
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