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MOC8204 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MOC8204 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  Parameter Test Conditions Symbol Min Typ(1) Max Unit EMITTER (IF = 10 mA) VF — 1.2 15 V Input Forward Voltage Reverse Leakage Current (VR = 6.0 V) IR —— 10 µA Capacitance (V = 0, f =1 MHz) CJ — 18 — pF DETECTOR BVCEO 400 — — V Collector-Emitter Breakdown Voltage (IC = 1.0 mA, RBE = 1M!) Collector-Base Breakdown Voltage (IC = 100 µA) BVCBO 400 —— V Emitter-Base Breakdown Voltage (IE = 100 µA) BVEBO 7 —— V Collector-Emitter Dark Current TA = 25°C (RBE = 1M!, VCE = 300 V) ICEO — — 100 nA TA = 100°C — — 250 µA INDIVIDUAL COMPONENT CHARACTERISTICS ELECTRICAL CHARACTERISTICS (T A = 25°C Unless otherwise specified.) Notes 1. Alway design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC /IF x 100%. 3. For this test LED pins 1 and 2 are common and phototransistor Pins 4,5 and 6 are common. GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS Characteristic Test Conditions Symbol Min Typ(1) Max Units Output Collector Current (VCE = 10 V, IF = 10 mA, RBE = 1M!)IC (CTR) (2) 2 (20) — — mA(%) Collector-Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA, RBE = 1M!)V(SAT) — — 0.4 V Input-Output Isolation Voltage(3) (II-O ≤ 1 µA, Time = 1min) VISO 5300 —— VAC(RMS) 7300 —— VAC(PEAK) Isolation Resistance(3) RISO — 1011 — ! Isolation Capacitance(1) CISO 0.2 pf Turn-On Time (VCC = 10 V, IC = 2 mA, RL = 100!) tON —5 — µs Turn-Off Time tOFF —5 — ISOLATION CHARACTERISTICS MOC8204 www.fairchildsemi.com 2 OF 6 3/22/01 DS300269 |
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