NXP Semiconductors

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

PBSS5230PAP

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Product data sheet

11 January 2013

4 / 17

-75

175

125

25

75

-25

006aad165

0.5

1.0

1.5

(W)

0

(1)

(2)

(3) (4)

(5)

(6)

(7)

(8)

(3) 4-layer PCB 70 µm, standard footprint

(6) 4-layer PCB 35 µm, standard footprint

(7) FR4 PCB 70 µm, standard footprint

(8) FR4 PCB 35 µm, standard footprint

Fig. 1. Per transistor: power derating curves

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

[1]

-

-

338

K/W

[2]

-

-

219

K/W

[3]

-

-

236

K/W

[4]

-

-

179

K/W

[5]

-

-

278

K/W

[6]

-

-

164

K/W

[7]

-

-

179

K/W

thermal resistance

from junction to

ambient

in free air

[8]

-

-

86

K/W

thermal resistance

from junction to solder

point

-

-

30

K/W