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RLT8340MG Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part # RLT8340MG
Description  High Power Infrared Laserdiode
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Manufacturer  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

RLT8340MG Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

  RLT8340MG Datasheet HTML 1Page - Roithner LaserTechnik GmbH  
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ROITHNER LASERTECHNIK
ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com
http://www.roithner-laser.com
RLT8340MG TECHNICAL DATA
High Power Infrared Laserdiode
Structure: AlGaAs double heterostructure
Lasing wavelength: 830 nm typ.
Max. optical power: 40 mW, single mode
Package: 5.6 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Optical Output Power
Po
40
mW
LD Reverse Voltage
VR(LD)
2
V
PD Reverse Voltage
VR(PD)
30
V
Operating Temperature
Top
-10 .. +50
°C
Storage Temperature
Tstg
-40 .. +85
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP MAX
UNIT
Threshold Current
Ith
cw
15
25
mA
Operation Current
Iop
Po = 40 mW
70
80
90
mA
Operation Voltage
Vop
Po = 40 mW
1.8
2.2
V
Lasing Wavelength
λ
p
Po = 40 mW
820
830
840
nm
Beam Divergence
θ
//
Po = 40 mW
8
10
11
°
Beam Divergence
θ⊥
Po = 40 mW
25
31
40
°
Monitor Current
Im
Po = 40 mW, Vr=5V
400
600
800
µA
NOTE!
LASERDIODE
MUST BE COOLED!


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