NXP Semiconductors

PBSS4260PAN

60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

PBSS4260PAN

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Product data sheet

12 December 2012

11 / 17

aaa-000083

400

200

600

800

0

1

10

(1)

(2)

(3)

Fig. 10. DC current gain as a function of collector

current; typical values

0

5

4

2

3

1

aaa-000113

1

2

3

(A)

0

45

40

35

30

25

20

15

10

5

Fig. 11. Collector current as a function of collector-

emitter voltage; typical values

aaa-000114

0.4

0.8

1.2

(V)

0.0

1

10

(1)

(2)

(3)

Fig. 12. Base-emitter voltage as a function of collector

current; typical values

aaa-000115

0.6

0.8

0.4

1.0

1.2

(V)

0.2

1

10

(1)

(3)

(2)

Fig. 13. Base-emitter saturation voltage as a function of

collector current; typical values