PBSS4230PANP datasheet(11/21 Pages) NXP

Part #	PBSS4230PANP

Description	30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

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NXP Semiconductors

PBSS4230PANP

30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

PBSS4230PANP

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Product data sheet

14 December 2012

11 / 21

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IC = -2 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-295

-420

mV

IC = -2 A; IB = -200 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-275

-390

mV

RCEsat

collector-emitter

saturation resistance

IC = -1 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

195

mΩ

IC = -500 mA; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1

V

IC = -1 A; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1

V

IC = -2 A; IB = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1.1

V

VBEsat

base-emitter saturation

voltage

IC = -2 A; IB = -200 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-1.2

V

VBEon

base-emitter turn-on

voltage

VCE = -2 V; IC = -0.5 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-0.9

V

td

delay time

-

10

-

ns

tr

rise time

-

50

-

ns

ton

turn-on time

-

60

-

ns

ts

storage time

-

200

-

ns

tf

fall time

-

45

-

ns

toff

turn-off time

VCC = -12.5 V; IC = -1 A; IBon = -0.05 A;

IBoff = 0.05 A; Tamb = 25 °C

-

245

-

ns

fT

transition frequency

VCE = -10 V; IC = -50 mA; f = 100 MHz;

Tamb = 25 °C

50

95

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

22

29

pF

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