NXP Semiconductors

PBSS4112PANP

120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

PBSS4112PANP

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Product data sheet

29 November 2012

6 / 21

006aad167

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aad168

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

4-layer PCB 35 µm, standard footprint

Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values