NXP Semiconductors

PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4112PAN

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Product data sheet

29 November 2012

3 / 17

Symbol

Parameter

Conditions

Min

Max

Unit

peak base current

-

1

A

[1]

-

370

mW

[2]

-

570

mW

[3]

-

530

mW

[4]

-

700

mW

[5]

-

450

mW

[6]

-

760

mW

[7]

-

700

mW

total power dissipation

[8]

-

1450

mW

Per device

[1]

-

510

mW

[2]

-

780

mW

[3]

-

730

mW

[4]

-

960

mW

[5]

-

620

mW

[6]

-

1040

mW

[7]

-

960

mW

total power dissipation

[8]

-

2000

mW

junction temperature

-

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.