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MSB710QT1 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MSB710QT1
Description  PNP General Purpose Amplifier Transistors Surface Mount
Download  6 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MSB710QT1 Datasheet(HTML) 2 Page - Motorola, Inc

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MSB710-QT1 MSB710-RT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
– 50
Vdc
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IE = 0)
V(BR)CBO
– 60
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
– 7.0
Vdc
Collector–Base Cutoff Current
(VCB = –20 Vdc, IE = 0)
ICBO
– 0.1
µAdc
DC Current Gain(1)
(VCE = –10 Vdc, IC = –150 mAdc)
MSB710–QT1
MSB710–RT1
(VCE = –10 Vdc, IC = 500 mAdc)
hFE1
hFE2
85
120
40
170
240
Collector–Emitter Saturation Voltage
(IC = – 300 mAdc, IB = – 30 mAdc)
VCE(sat)
– 0.6
Vdc
Collector–Base Saturation Voltage
(IC = – 300 mAdc, IB = – 30 mAdc)
VBE(sat)
–1.5
Vdc
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
15
pF
1. Pulse Test: Pulse Width
≤ 300 µs, D.C. ≤ 2%.


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