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MSB710QT1 Datasheet(PDF) 2 Page - Motorola, Inc |
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MSB710QT1 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 6 page MSB710-QT1 MSB710-RT1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO – 50 — Vdc Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CBO – 60 — Vdc Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 7.0 — Vdc Collector–Base Cutoff Current (VCB = –20 Vdc, IE = 0) ICBO — – 0.1 µAdc DC Current Gain(1) (VCE = –10 Vdc, IC = –150 mAdc) MSB710–QT1 MSB710–RT1 (VCE = –10 Vdc, IC = 500 mAdc) hFE1 hFE2 85 120 40 170 240 — — Collector–Emitter Saturation Voltage (IC = – 300 mAdc, IB = – 30 mAdc) VCE(sat) — – 0.6 Vdc Collector–Base Saturation Voltage (IC = – 300 mAdc, IB = – 30 mAdc) VBE(sat) — –1.5 Vdc Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 15 pF 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. |
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