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MSB710QT1 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MSB710QT1
Description  PNP General Purpose Amplifier Transistors Surface Mount
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MSB710QT1 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP General Purpose Amplifier
Transistors Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
– 60
Vdc
Collector–Emitter Voltage
V(BR)CEO
– 50
Vdc
Emitter–Base Voltage
V(BR)EBO
– 7.0
Vdc
Collector Current — Continuous
IC
– 500
mAdc
Collector Current — Peak
IC(P)
–1.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 ~ +150
°C
DEVICE MARKING
Marking Symbol
CQX
MSB710–QT1
CRX
MSB710–RT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MSB710–QT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
© Motorola, Inc. 1996
MSB710-QT1
MSB710-RT1
*Motorola Preferred Device
*
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
REV 1


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