SI5315-EVB datasheet(6/54 Pages) SILABS

Part #	SI5315-EVB

Description	Provides jitter attenuation and frequency translation between SONET/PDH and Ethemet

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Manufacturer	SILABS [Silicon Laboratories]

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Si5315

6

Rev. 1.0

Output Drive Current

CKOIO

CMOS

Driving into CKOVOL for out-

put low or CKOVOH for out-

put high. CKOUT+ and

CKOUT– shorted externally.

VDD = 1.71 V

7.5

—

mA

VDD = 2.97 V

32

—

mA

2-Level LVCMOS Input Pins

Input Voltage Low

VIL

VDD =1.71V

—

0.5

V

VDD =2.25V

—

0.7

V

VDD =2.97V

—

0.8

V

Input Voltage High

VIH

VDD =1.89V

1.4

—

V

VDD =2.25V

1.8

—

V

VDD =3.63V

2.5

—

V

Input Low Current

IIL

——

50

µA

Input High Current

IIH

——

50

µA

Weak Internal Input Pull-up

Resistor

RPUP

—75

—

k



Weak Internal Input

Pull-down Resistor

RPDN

—75

—

k



3-Level Input Pins

Input Voltage Low

VILL

——

0.15 x VDD

V

Input Voltage Mid

VIMM

0.45 x VDD

—

0.55 x VDD

V

Input Voltage High

VIHH

0.85 x VDD

——

V

Input Low Current

IILL

See note 3.

–20

—

µA

Input Mid Current

IIMM

See note 3.

–2

—

2

µA

Input High Current

IIHH

See note 3.

—

20

µA

Table 2. DC Characteristics (Continued)

(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Notes:

1. Refers to Si5315A speed grade.

2. Refers to Si5315B speed grade.

3. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 11.

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