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UID: ATU61938489 - FN: 266954 f - Handelsgericht Wien

RLT855-10MG

Laser Diode Technical Data

ABSOLUTE MAXIMUM RATINGS ( Tc=25

Features

DESCRIPTION

SYMBOL

RATED VALUE

Optical Power (mW)

5

Operation Temperature (

-10 to +50

Storage Temperature (

-40 to +85

LD Reverse Voltage (V)

2

PD Reverse Voltage (V)

30

•

Index Guided MQW Structure

•

Wavelength : 855 nm (Typ.)

•

Optical Power : 10 mW CW

•

Threshold Current : 30 mA ( Typ. )

•

Package Style : TO-18 (5.6 mmØ)

OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25

DESCRIPTION

SYMBOL

MIN.

TYPICAL

MAX.

TEST CONDITION

Lasing Wavelength (nm)

λ

p

850

855

895

Threshold Current (mA)

20

30

50

Operating Current (mA)

25

45

55

Operating Voltage (V)

1.8

2.0

2.5

Monitor Current (mA)

0.1

0.45

0.75

Slope Efficiency (mW/mA)

η

0.5

0.7

0.9

***

°)

8

10

12

°)

θ⊥

25

30

40

Astigmatism (

μm)

*

11

*