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CR05AM-16A-TBB00 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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CR05AM-16A-TBB00 Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page CR05BM-12A Preliminary R07DS0992EJ0100 Rev.1.00 Page 5 of 7 Dec 20, 2012 160 120 60 40 20 140 100 80 0 160 –40 0 40 80 120 160 –40 040 80 120 Typical Example Breakover Voltage vs. Junction Temperature Junction Temperature (°C) RGK = 1k Ω Breakover Voltage vs. Gate to Cathode Resistance Gate to Cathode Resistance (k Ω) 0 80 100 120 40 60 20 Typical Example Tj = 125°C 10−1 100 101 102 Breakover Voltage vs. Rate of Rise of Off-State Voltage Rate of Rise of Off-State Voltage (V/ μs) 160 0 80 100 120 140 40 60 20 Tj = 125°C RGK = 1k Ω Typical Example 100 101 102 103 101 100 10−1 10−2 Holding Current vs. Junction Temperature Junction Temperature (°C) RGK = 1k Ω IGT(25°C) = 35 μA Typical Example Distribution 10−1 100 101 102 Holding Current vs. Gate to Cathode Resistance Gate to Cathode Resistance (k Ω) 600 500 0 300 400 100 200 Typical Example Tj = 125°C 102 101 100 10−1 100 101 102 10−1 Typical Example Turn-On Time vs. Gate Current Gate Current (mA) VD = 100V RL = 47 Ω RGK = 1k Ω Ta = 25°C |
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