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STPS3L60RL Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS3L60RL Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page Characteristics STPS3L60 2/11 Doc ID 7505 Rev 6 1 Characteristics Table 2. Absolute ratings(1) 1. limiting values, per diode Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current TL = 105 °C δ = 0.5 (DO-201AD, SMB) 3A TL = 72 °C δ = 0.5 (DO-15) TL = 127 °C δ = 0.5 (SMBflat) IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2000 W Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature(2) 2. condition to avoid thermal runaway for a diode on its own heatsink 150 °C dV/dt Critical rate of rise reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Parameter Value Unit Rth (j-l) Junction to leads SMBflat 10 °C/W SMB 20 Lead length = 10 mm DO-201AD 20 DO-15 35 dPtot dTj --------------- 1 Rth j a – () -------------------------- < |
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