PSMN3R2-30YLC datasheet(4/8 Pages) PHILIPS

Part #	PSMN3R2-30YLC

Description	NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 8 page

4

NextPower MOSFETs - Visit us at www.nxp.com/mosfets

NextPower types – parametric data

The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low R

DS(on) types are also highly

recommended for Power OR-ing applications and low voltage isolated power supply topologies.

Type

Voltage (V)

R

DS(on)typ

V

GS = 4.5 V (mΩ)

Q

G(typ)

V

GS = 4.5 V (nC)

Q

GD(typ)

V

GS = 4.5 V (nC)

C

OSS (pF)

PSMN0R9-25YLC

25

0.95

51

14

1437

PSMN1R1-25YLC

25

1.2

39

11

1121

PSMN1R2-25YLC

25

1.35

31

8.3

994

PSMN1R7-25YLC

25

2

28

7.8

880

PSMN1R9-25YLC

25

2.2

27

7.4

761

PSMN2R2-25YLC

25

2.6

18

5.2

617

PSMN2R9-25YLC

25

3.45

16

4.4

501

PSMN3R2-25YLC

25

3.7

14

4

462

PSMN3R7-25YLC

25

4.25

10.1

3

370

PSMN4R0-25YLC

25

4.5

10.9

3.5

354

25 V NextPower types

NextPower MOSFETs use ‘Superjunction’ silicon technology to

deliver the optimum balance between low R

DS, low QG(tot), low

Q

GD, high SOA performance and low Coss at 25 V and 30 V.

Superjunction technology combines the benefits of a lateral

MOSFET, (low Q

g(tot) and low QGD) with the benefits of a

Trench-MOSFET (low R

DS(on) and 20 V rugged GATE rating)

resulting in a uniquely balanced specification.

NextPower uses an optimized balance of the different

resistance elements in the MOSFET to achieve a lower

on-resistance for every cell. The low cell resistance means that

NextPower types typically require fewer cells than competitor

devices to achieve the same R

DS(on), and a lower cell count

provides lower Q

G(tot), low QGD, low Coss and superior ‘Safe

operating area’ ruggedness.

NextPower technology uses p-Type

pillars to improve the breakdown

voltage in the OFF state, and a heavily

doped n-Type drift region to achieve

exceptionally low ON resistance.

Since fewer cells are required to

achieve a given R

DS rating, then gate

charge (Q

G), Miller charge (QGD),

output capacitance (C

oss) are all

reduced and optimum ruggedness

(denoted by the safe operating area

characteristics) is achieved.

Superjunction technology

Drain

p-Type

PILLARS

n-Type

DRIFT REGION

n+

Gate

p-Body

Source

Similar Part No. - PSMN3R2-30YLC

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PSMN3R2-30YLC	1Mb / 8P	NextPower MOSFETs May 2011
Nexperia B.V. All right...	PSMN3R2-30YLC	933Kb / 15P	N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 - 2 May 2011
NXP Semiconductors	PSMN3R2-30YLC	352Kb / 15P	N-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technology Rev. 01-2 May 2011

More results

Similar Description - PSMN3R2-30YLC

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PSMN3R8-30LL	1Mb / 8P	NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) May 2011
Nexperia B.V. All right...	PSMN1R2-30YLC	931Kb / 15P	N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 - 3 May 2011
Nexperia B.V. All right...	PSMN2R2-30YLC	934Kb / 15P	N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 02 - 3 May 2011
NXP Semiconductors	PSMN2R6-30YLC	351Kb / 15P	N-channel 30 V 2.8m logic level MOSFET in LFPAK using NextPower technology Rev. 01-2 May 2011
NXP Semiconductors	PSMN3R2-30YLC	352Kb / 15P	N-channel 30 V 3.5m logic level MOSFET in LFPAK using NextPower technology Rev. 01-2 May 2011
Nexperia B.V. All right...	PSMN2R6-30YLC	931Kb / 15P	N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 - 2 May 2011
	PSMN3R2-30YLC	933Kb / 15P	N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 - 2 May 2011
	PSMN4R1-30YLC	750Kb / 14P	N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology 12 February 2013
	PSMN3R7-30YLC	467Kb / 16P	N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 - 2 May 2011
	PSMN6R5-25YLC	903Kb / 15P	N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 - 31 October 2011

More results

PSMN3R2-30YLC Datasheet(PDF) 4 Page - NXP Semiconductors

PSMN3R2-30YLC Datasheet(HTML) 4 Page - NXP Semiconductors

Similar Part No. - PSMN3R2-30YLC

Similar Description - PSMN3R2-30YLC

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL