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PSMN3R2-30YLC Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN3R2-30YLC Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 4 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower types – parametric data The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low R DS(on) types are also highly recommended for Power OR-ing applications and low voltage isolated power supply topologies. Type Voltage (V) R DS(on)typ V GS = 4.5 V (mΩ) Q G(typ) V GS = 4.5 V (nC) Q GD(typ) V GS = 4.5 V (nC) C OSS (pF) PSMN0R9-25YLC 25 0.95 51 14 1437 PSMN1R1-25YLC 25 1.2 39 11 1121 PSMN1R2-25YLC 25 1.35 31 8.3 994 PSMN1R7-25YLC 25 2 28 7.8 880 PSMN1R9-25YLC 25 2.2 27 7.4 761 PSMN2R2-25YLC 25 2.6 18 5.2 617 PSMN2R9-25YLC 25 3.45 16 4.4 501 PSMN3R2-25YLC 25 3.7 14 4 462 PSMN3R7-25YLC 25 4.25 10.1 3 370 PSMN4R0-25YLC 25 4.5 10.9 3.5 354 25 V NextPower types NextPower MOSFETs use ‘Superjunction’ silicon technology to deliver the optimum balance between low R DS, low QG(tot), low Q GD, high SOA performance and low Coss at 25 V and 30 V. Superjunction technology combines the benefits of a lateral MOSFET, (low Q g(tot) and low QGD) with the benefits of a Trench-MOSFET (low R DS(on) and 20 V rugged GATE rating) resulting in a uniquely balanced specification. NextPower uses an optimized balance of the different resistance elements in the MOSFET to achieve a lower on-resistance for every cell. The low cell resistance means that NextPower types typically require fewer cells than competitor devices to achieve the same R DS(on), and a lower cell count provides lower Q G(tot), low QGD, low Coss and superior ‘Safe operating area’ ruggedness. NextPower technology uses p-Type pillars to improve the breakdown voltage in the OFF state, and a heavily doped n-Type drift region to achieve exceptionally low ON resistance. Since fewer cells are required to achieve a given R DS rating, then gate charge (Q G), Miller charge (QGD), output capacitance (C oss) are all reduced and optimum ruggedness (denoted by the safe operating area characteristics) is achieved. Superjunction technology Drain p-Type PILLARS n-Type DRIFT REGION n+ Gate p-Body Source |
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Similar Description - PSMN3R2-30YLC |
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