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PMBTA56-215 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMBTA56-215 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 2004 Jan 09 2 NXP Semiconductors Product data sheet PNP general purpose transistor PMBTA56 FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBTA06. MARKING Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. PINNING TYPE NUMBER MARKING CODE(1) PMBTA56 *2G PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM256 Top view 2 3 1 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PMBTA56 − plastic surface mounted package; 3 leads SOT23 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −80 V VCEO collector-emitter voltage open base − −80 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −500 mA ICM peak collector current − −1 A IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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