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MJD45H11 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. MJD45H11
Description  General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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MJD45H11 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2003 Fairchild Semiconductor Corporation
Rev. C2, July 2003
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
- 80
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 8
A
ICP
Collector Current (Pulse)
- 16
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
IC = - 30mA, IB = 0
- 80
V
ICEO
Collector Cut-off Current
VCE = - 80V, IB = 0
- 10
µA
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 50
µA
hFE
*DC Current Gain
VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
60
40
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = - 8A, IB = - 0.4A
- 1
V
VBE(on)
*Base-Emitter Saturation Voltage
IC = - 8A, IB = - 0.8A
- 1.5
V
fT
Current Gain Bandwidth Product
VCE= - 10A, IC = - 0.5A
40
MHz
Cob
Collector Capacitance
VCB = - 10V, f = 1MHz
230
pF
tON
Turn On Time
IC = - 5A
IB1= - IB2 = - 0.5A
135
ns
tSTG
Storage Time
500
ns
tF
Fall Time
100
ns
MJD45H11
General Purpose Power and Switching Such
as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11


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