MJD44H11 datasheet(1/4 Pages) FAIRCHILD

Part #	MJD44H11

Description	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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Rev. A2, June 2001

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW

≤300µs, Duty Cycle≤2%

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

8

A

ICP

Collector-Current (Pulse)

16

A

PC

Collector Dissipation (TC=25°C)

20

W

Collector Dissipation (Ta=25°C)

1.75

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

*Collector-Emitter Sustaining Voltage

IC = 30mA, IB = 0

80

V

ICEO

Collector Cut-off Current

VCE = 80V, IB = 0

10

µA

IEBO

Emitter Cut-off Current

VBE = 5V, IC = 0

50

µA

hFE

*DC Current Gain

VCE = 1V, IC = 2A

VCE = 1V, IC = 4A

60

40

VCE(sat)

*Collector-Emitter Saturation Voltage

IC = 8A, IB = 0.4A

1

V

VBE(on)

*Base-Emitter ON Voltage

IC = 8A, IB = 0.8A

1.5

V

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.5A

50

MHz

Cob

Output Capacitance

VCB =10V, f = 1MHz

130

pF

tON

Turn ON Time

IC = 5A

IB1 = - IB2 = 0.5A

300

ns

tSTG

Storage Time

500

ns

tF

Fall Time

140

ns

MJD44H11

General Purpose Power and Switching Such

as Output or Driver Stages in Applications

D-PAK for Surface Mount Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular MJE44H

• Fast Switching Speeds

• Low Collector Emitter Saturation Voltage

1.Base

2.Collector

3.Emitter

D-PAK

I-PAK

11

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