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IRLL2705TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLL2705TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLL2705PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.061 V/°C Reference to 25°C, ID = 1mA 0.040 VGS = 10V, ID = 3.8A 0.051 Ω VGS = 5.0V, ID = 3.8A 0.065 VGS = 4.0V, ID = 1.9A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.1 S VDS = 25V, ID = 1.9A 25 VDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = 16V Gate-to-Source Reverse Leakage -100 VGS = -16V Qg Total Gate Charge 32 48 ID = 3.8A Qgs Gate-to-Source Charge 3.5 5.3 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge 9.7 14 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time 6.2 VDD = 28V tr Rise Time 12 ns ID = 3.8A td(off) Turn-Off Delay Time 35 RG = 6.2Ω tf Fall Time 22 RD = 7.1Ω, See Fig. 10 Ciss Input Capacitance 870 VGS = 0V Coss Output Capacitance 220 pF VDS = 25V Crss Reverse Transfer Capacitance 92 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current µA Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V trr Reverse Recovery Time 58 88 ns TJ = 25°C, IF = 3.8A Qrr Reverse RecoveryCharge 140 210 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 30 0.91 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 3.8A, di/dt ≤ 220A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD = 25V, starting TJ = 25°C, L = 15mH RG = 25Ω, IAS = 3.8A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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