Electronic Components Datasheet Search |
|
SF55G Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd |
|
SF55G Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page SUPE RFAST RECOVERY RECTIFIERS VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. High temperature soldering : 260 • / 10 seconds at terminals Pb free product at available : 99% Sn above meet RoHS • environment substance directive request MECHANICAL DATA • Case: Molded plastic, DO-201AD • Terminals: Axial leads, solderable to MIL-STD-202,Method 208 • Polarity: Color Band denotes cathode end • Mounting Position: Any • Weight: 0.04 ounce, 1.12 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz. SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G UNITS Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 600 800 Maximum RMS Voltage 35 70 105 140 210 320 420 640 Maximum DC Blocking Voltage 50 100 150 200 300 400 600 800 Maximum Average Forward Current .375"(9.5mm) lead length at TA=55 J 5.0 A Peak Forward Surge Current, IFM (surge):8.3ms single halfsine-wave superimposed on rated load(JEDEC method) 150.0 A Maximum Forward Voltage at 5.0A DC 0.95 1.25 1.70 Maximum DC Reverse Current at Rated DC Blocking Voltage 5.0 µA Maximum DC Reverse Current at Rated DC Blocking Voltage TA=125 300 µA Maximum Reverse Recovery Time(Note 1) 35.0 nS Typical Junction capacitance (Note 2) 45 pF Typical Junction Resistance(Note 3) R θJA 25 /W Operating and Storage Temperature Range TJ -55 to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted .375 (9.5) .285 (7.2) .210 (5.3) .188 (4.8) .052 (1.3) .048 (1.2) DIA. DIA. DO-201AD Unit:inch(mm) 1.0 (25.4) MIN. 1.0 (25.4) MIN. DATA SHEET SF51G~SF58 G SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20110725 °C °C °C °C °C V V V V |
Similar Part No. - SF55G |
|
Similar Description - SF55G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |