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FCX688B Datasheet(PDF) 2 Page - Diodes Incorporated |
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FCX688B Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page  ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 12 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 12 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=9V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 40 60 180 350 400 mV mV mV mV mV IC=0.1A, IB=1mA * IC=0.1A, IB=0.5mA * IC=1A, IB=10mA * IC=3A, IB=10mA * IC=4A, IB=50mA * Base-Emitter Saturation Voltage VBE(sat) 1.1 V I C=3A, IB=20mA * Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=3A, VCE=2V * Static Forward Current Transfer Ratio hFE 500 400 100 IC=100mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* Transition Frequency fT 150 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 40 pF VCB=10V, f=1MHz Switching Times ton toff 40 500 ns ns IC=500mA, IB1=IB2=50mA VCC=10V *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% FCX688B |
Similar Part No. - FCX688B |
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Similar Description - FCX688B |
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