SI2301BDS-T1-GE3 datasheet(2/9 Pages) VISHAY

Part #	SI2301BDS-T1-GE3

Description	P-Channel 2.5 V (G-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 9 page

www.vishay.com

2

Document Number: 72066

S11-2044-Rev. F, 17-Oct-11

Vishay Siliconix

Si2301BDS

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test: pulse width

 300 µs duty cycle 2 %.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.45

- 0.95

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS  - 5 V, VGS = - 4.5 V

- 6

A

VDS  - 5 V, VGS = - 2.5 V

- 3

Drain-Source On-State Resistancea

RDS(on)

VGS  - 4.5 V, ID = - 2.8 A

0.080

0.100



VGS = - 2.5 V, ID = - 2 A

0.110

0.150

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 2.8 A

6.5

S

Diode Forward Voltage

VSD

IS = - 0.75 A, VGS = 0 V

- 0.80

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V

ID  - 2.8 A

4.5

10

nC

Gate-Source Charge

Qgs

0.7

Gate-Drain Charge

Qgd

1.1

Gate Resistance

Rg

f = 1 MHz

2

8

16



Input Capacitance

Ciss

VDS = - 6 V, VGS = 0 V, f = 1 MHz

375

pF

Output Capacitance

Coss

95

Reverse Transfer Capacitance

Crss

65

Switchingc

Turn-On Time

td(on)

VDD = - 6 V, RL = 6 

ID  - 1 A, VGEN = - 4.5 V

Rg = 6 

20

30

ns

tr

40

60

Turn-Off Time

td(off)

30

45

tf

20

30

Similar Part No. - SI2301BDS-T1-GE3

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	SI2301BDS-T1-GE3	1Mb / 9P	P-Channel 20-V (D-S) MOSFET

More results

Similar Description - SI2301BDS-T1-GE3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI2301ADS	39Kb / 4P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 29-Apr-02
	SI4493DY	44Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. A, 07-Jul-03
	SI6433BDQ-T1-GE3	209Kb / 11P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 31-Mar-08
Guangdong Kexin Industr...	KI1303EDL	60Kb / 2P	P-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI3443BDV	210Kb / 10P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 20-Apr-09
	SI2301BDS	180Kb / 8P	P-Channel 2.5 V (G-S) MOSFET 01-Jan-2022
	SI3443DV-T1	64Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. B, 29-Sep-97
	SI3441DV-T1	52Kb / 5P	P-Channel 2.5-V (G-S) MOSFET Rev. G, 01-Apr-02
	SI6433BDQ	100Kb / 6P	P-Channel 2.5-V (G-S) MOSFET Rev. C, 31-Mar-08
	SI1403BDL	130Kb / 6P	P-Channel 2.5-V (G-S) MOSFET S-71951-Rev. B, 10-Sep-07

More results

SI2301BDS-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix

SI2301BDS-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SI2301BDS-T1-GE3

Similar Description - SI2301BDS-T1-GE3

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL