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2N7002BKMB Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. 2N7002BKMB
Description  60 V, single N-channel Trench MOSFET
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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2N7002BKMB Datasheet(HTML) 6 Page - NXP Semiconductors

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2N7002BKMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
6 of 15
NXP Semiconductors
2N7002BKMB
60 V, single N-channel Trench MOSFET
7.
Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =10µA; VGS =0V; Tj = 25 °C
60
--V
VGSth
gate-source threshold
voltage
ID =250 µA; VDS =VGS; Tj = 25 °C
1.1
1.6
2.1
V
IDSS
drain leakage current
VDS =60V; VGS =0V; Tj = 25 °C
--1
µA
VDS =60V; VGS =0V; Tj = 150 °C
--10
µA
IGSS
gate leakage current
VGS =-20 V; VDS =0V; Tj = 25 °C
--10
µA
VGS =20V; VDS =0V; Tj = 25 °C
--10
µA
RDSon
drain-source on-state
resistance
VGS =10V; ID =450 mA; Tj =25°C
-
1
1.6
VGS =10V; ID =450 mA; Tj = 150 °C
-
2.2
3.5
VGS =5V; ID =50mA; Tj =25°C
-
1.3
2
gfs
forward
transconductance
VDS =10V; ID = 200 mA; Tj = 25 °C
-
550
-
mS
Dynamic characteristics
QG(tot)
total gate charge
VDS =30V; ID = 300 mA; VGS =4.5 V;
Tj =25°C
-0.5
0.6
nC
QGS
gate-source charge
-
0.2
-
nC
QGD
gate-drain charge
-
0.1
-
nC
Ciss
input capacitance
VDS =10V; f=1MHz; VGS =0V;
Tj =25°C
-
3350pF
Coss
output capacitance
-
7
-
pF
Crss
reverse transfer
capacitance
-4
-pF
td(on)
turn-on delay time
VDS =50V; RL = 250 Ω; VGS =10V;
RG(ext) =6 Ω; Tj =25 °C
-
5
10
ns
tr
rise time
-
6
-
ns
td(off)
turn-off delay time
-
12
24
ns
tf
fall time
-7
-ns
Source-drain diode
VSD
source-drain voltage
IS =115 mA; VGS =0V; Tj = 25 °C
0.47
0.75
1.1
V


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