NSBC143ZDXV6T1 datasheet(2/9 Pages) ONSEMI

Part #	NSBC143ZDXV6T1

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSBC114EDXV6T1, NSBC114EDXV6T5

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DEVICE MARKING, ORDERING, AND RESISTOR VALUES

Device†

Package*

Marking

R1 (kW)

R2 (kW)

NSBC114EDXV6T1

SOT−563

7A

10

NSBC124EDXV6T1 / NSVBC124EDXV6T1G

SOT−563

7B

22

NSBC144EDXV6T1

SOT−563

7C

47

NSBC114YDXV6T1

SOT−563

7D

10

47

NSBC114TDXV6T1 (Note 2)

SOT−563

7E

10

∞

NSBC143TDXV6T1 (Notes 2)

SOT−563

7F

4.7

∞

NSBC113EDXV6T1 (Note 2)

SOT−563

7G

1.0

NSBC123EDXV6T1 (Notes 2)

SOT−563

7H

2.2

NSBC143EDXV6T1 (Notes 2)

SOT−563

7J

4.7

NSBC143ZDXV6T1 (Notes 2)

SOT−563

7K

4.7

47

NSBC124XDXV6T1 (Notes 2)

SOT−563

7L

22

47

NSBC123JDXV6T1 (Note 2)

SOT−563

7M

2.2

47

NSBC115EDXV6T1 (Notes 2)

SOT−563

7N

100

NSBC144WDXV6T1 (Notes 2)

SOT−563

7P

47

22

†The “G’’ suffix indicates Pb−Free package available.

*This package is inherently Pb−Free.

2. New resistor combinations. Updated curves to follow in subsequent data sheets.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current

NSBC114EDXV6T1

(VEB = 6.0 V, IC = 0)

NSBC124EDXV6T1 / NSVBC124EDXV6T1G

NSBC144EDXV6T1

NSBC114YDXV6T1

NSBC114TDXV6T1

NSBC143TDXV6T1

NSBC113EDXV6T1

NSBC123EDXV6T1

NSBC143EDXV6T1

NSBC143ZDXV6T1

NSBC124XDXV6T1

NSBC123JDXV6T1

NSBC115EDXV6T1

NSBC144WDXV6T1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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