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NCP3155ADR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP3155ADR2G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 25 page  NCP3155A, NCP3155B http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (−40°C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted) Characteristic Conditions Min Typ Max Unit Input Voltage Range − 4.7 24 V SUPPLY CURRENT VCC Supply Current NCP3155A VFB = 0.8 V, Switching, VCC = 4.7 V − 11.1 − mA VFB = 0.8 V, Switching, VCC = 24 V − 31.5 − mA VCC Supply Current NCP3155B VFB = 0.8 V, Switching, VCC = 4.7 V − 16.5 − mA VFB = 0.8 V, Switching, VCC = 24 V − 54.7 − mA UNDER VOLTAGE LOCKOUT UVLO Rising Threshold VCC Rising Edge 4.0 4.3 4.7 V UVLO Falling Threshold VCC Falling Edge 3.5 3.9 4.3 V OSCILLATOR Oscillator Frequency NCP3155A TJ = +25°C, 4.7 V v VCC v 24 V 415 500 585 kHz TJ = −40°C to +125°C, 4.7 V v VCC v 24 V 400 500 600 kHz Oscillator Frequency NCP3155B TJ = +25°C, 4.7 V v VCC v 24 V 830 1000 1170 kHz TJ = −40°C to +125°C, 4.7 V v VCC v 24 V 820 1000 1180 kHz Ramp−Amplitude Voltage Vpeak − Valley − 1.5 − V Ramp Valley Voltage 0.46 0.71 0.85 V PWM Minimum Duty Cycle (Note 4) − 7.0 − % Maximum Duty Cycle 80 84 − % Soft Start Ramp Time NCP3155A NCP3155B VFB = VCOMP − − 2.4 1.2 − − ms ERROR AMPLIFIER (GM) Transconductance 0.9 1.3 1.9 mS Open Loop dc Gain (Notes 4 and 6) − 70 − dB Output Source Current VFB = 750 mV 45 70 100 mA Output Sink Current VFB = 850 mV 45 70 100 mA FB Input Bias Current − 0.5 500 nA Feedback Voltage TJ = 25 C 4.7 V < VIN < 24 V, −40°C < TJ < +125°C 0.792 0.784 0.8 0.8 0.808 0.816 V V COMP High Voltage VFB = 750 mV 4.0 4.4 5.0 V COMP Low Voltage VFB = 850 mV − 72 250 mV OUTPUT VOLTAGE FAULTS Feedback OOV Threshold 0.91 1.00 1.09 V Feedback OUV Threshold 0.56 0.60 0.64 V PWM OUTPUT STAGE High−Side Switch On Resistance VIN = 12 V VIN = 4.7 V − − 48 65 63 85 mW Low−Side Switch On Resistance VIN = 12 V VIN = 4.7 V − − 18 21 35 50 mW OVERCURRENT ISET Source Current 7 13.5 18 mA Current Limit Set Voltage (Note 5) RSET = 22.1 kW − 298 − mV THERMAL SHUTDOWN Thermal Shutdown (Notes 4 and 7) − 175 − °C Hysteresis (Notes 4 and 7) − 20 − °C 4. Guaranteed by design. 5. The voltage sensed across the high side MOSFET during conduction. 6. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal Ro of > 10 MW. 7. This is not a protection feature. |
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