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KSE13004 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. KSE13004
Description  High Voltage Switch Mode Application
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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KSE13004 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300µs, Duty cycle≤2% Pulse
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: KSE13004
: KSE13005
600
700
V
V
VCEO
Collector-Emitter Voltage
: KSE13004
: KSE13005
300
400
V
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO(sus)
Collector-Emitter Sustaining Voltage
: KSE13004
: KSE13005
IC = 10mA, IB = 0
300
400
V
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
1
mA
hFE
*DC Current Gain
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
10
8
60
40
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1
V
V
V
VBE (sat)
*Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
65
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
4
MHz
tON
Turn On Time
VCC = 125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 62.5Ω
0.8
µs
tSTG
Storage Time
4
µs
tF
Fall Time
0.9
µs
KSE13004/13005
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1.Base
2.Collector
3.Emitter
1
TO-220


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