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KSE13003 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. KSE13003
Description  High Voltage Switch Mode Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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KSE13003 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: Pulse Width=5ms, Duty Cycle
≤10%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
1.5
A
ICP
Collector Current (Pulse)
3
A
IB
Base Current
0.75
A
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
10
µA
hFE
*DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC =1A
8
5
40
VCE(sat)
*Collector Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 1.5A, IB = 0.5A
0.5
1
3
V
V
V
VBE(sat)
*Base Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
1
1.2
V
V
Cob
Output Capacitance
VCB = 10V , f = 0.1MHz
21
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.1A
4
MHz
tON
Turn On Time
VCC =125V, IC = 1A
IB1 = 0.2A, IB2 = - 0.2A
RL = 125Ω
1.1
µs
tSTG
Storage Time
4.0
µs
tF
Fall Time
0.7
µs
KSE13003
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-126
1. Emitter
2.Collector
3.Base


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