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RJQ6008DPM Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJQ6008DPM Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page RJQ6008DPM Preliminary R07DS0847EJ0100 Rev.1.00 Page 3 of 8 Jul 17, 2012 Main Characteristics IGBT 0 20 60 40 80 100 1 2 6 4 5 3 7 Typical Output Characteristics Typical Transfer Characteristics 1234 6 5 Ta = 25°C Pulse Test Maximum Safe Operation Area 1000 100 10 0.1 1 10 100 1 0.01 0.1 0.001 1000 0 20 40 60 100 80 12 0 2468 10 PW = 10 μs 2 0 4 6 8 4 8 12 20 16 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 20 A 25 A 10 A IC = 50 A VGE = 6.4 V 8 V 6.8 V 7.2 V 7.6 V Ta = 25°C Pulse Test VCE = 10 V Pulse Test Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Ta = 25°C 1 shot pulse 25°C –25 °C Ta = 75 °C 8.4 V 9 V 10 V 15 V 13 V Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Junction Temparature Tj (°C) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Junction Temparature Tj (°C) −25 0 25 75 125 50 100 150 VGE = 15 V Pulse Test 50 A 25 A 20 A 10 A IC = 100 A 0 2 6 4 8 10 −25 0 25 75 125 50 100 150 VCE = 10 V Pulse Test 1 mA IC = 10 mA |
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