R07DS0825EJ0002 Rev.0.02

Page 1 of 3

Aug 09, 2012

Preliminary Datasheet

RJP65S08DWT/RJP65S08DWA

650V - 200A - IGBT

Application: Inverter

Features

 Low collector to emitter saturation voltage

 High speed Switching

 Short circuit withstands time (10 s min.)

Outline

1. Gate

2. Collector (The back)

3. Emitter

Die: RJP65S08DWT-80

Wafer: RJP65S08DWA-80

2

C

2

1 G

E

3

1

3

3

3

3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

650

V

Gate to emitter voltage

±30

V

Tc = 25°C

Note1

400

A

Collector current

Tc = 100°C

Note1

200

A

Junction temperature

Tj

150

C

Notes: 1. This data is a regulated value in evaluation package.

R07DS0825EJ0002

Rev.0.02

Aug 09, 2012