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RJP65S06DWT Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP65S06DWT Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS0823EJ0002 Rev.0.02 Page 1 of 3 Aug 09, 2012 Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) Outline 1. Gate 2. Collector (The back) 3. Emitter Die: RJP65S06DWT-80 Wafer: RJP65S06DWA-80 2 C 2 1 G E 3 1 3 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage VGES ±30 V Tc = 25°C IC Note1 200 A Collector current Tc = 100°C IC Note1 100 A Junction temperature Tj 150 C Notes: 1. This data is a regulated value in evaluation package. R07DS0823EJ0002 Rev.0.02 Aug 09, 2012 |
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